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ZXMP10A18G
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
-100
?
?
?
?
?
?
-1
± 100
V
μ A
nA
I D = -250 μ A, V GS = 0V
V DS = -100V, V GS = 0V
V GS = ± 20V, V DS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 6)
Forward Transconductance (Notes 6 & 7)
Diode Forward Voltage (Note 6)
Reverse recovery time (Note 7)
Reverse recovery charge (Note 7)
V GS(th)
R DS (ON)
g fs
V SD
t rr
Q rr
-2.0
?
?
?
?
?
?
6.0
-0.85
49
107
-4.0
150
190
?
-0.95
?
?
V
m ?
S
V
ns
nC
I D = -250 μ A, V DS = V GS
V GS = -10V, I D = -2.8A
V GS = -6V, I D = -2.4A
V DS = -15V, I D = -2.8A
I S = -3.5A, V GS = 0V, T J = 25°C
I S = -2.8A, di/dt = 100A/ μ s,
T J = 25°C
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 8)
Gate-Source Charge (Note 8)
Gate-Drain Charge (Note 8)
Turn-On Delay Time (Note 8)
Turn-On Rise Time (Note 8)
Turn-Off Delay Time (Note 8)
Turn-Off Fall Time (Note 8)
C iss
C oss
C rss
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
?
?
?
?
?
?
?
?
?
?
1055
90
76
26.9
3.9
10.2
4.6
6.8
33.9
17.9
?
?
?
?
?
?
?
?
?
?
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V DD = -50V, V GS = 0V
f = 1MHz
V GS = -10V, V DS = -50V
I D = -2.8A
V DD = -50V, V GS = -10V
I D = -1A, R G ? 6.0 Ω
Notes:
6. Measured under pulsed conditions. Pulse width ≤ 300 μ s; duty cycle ≤ 2%
7. For design aid only, not subject to production testing.
8. Switching characteristics are independent of operating junction temperatures.
ZXMP10A18G
Document Number DS33598 Rev. 2 - 2
4 of 8
www.diodes.com
December 2011
? Diodes Incorporated
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